Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon
نویسندگان
چکیده
We report on the formation of a lightly doped p–n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion mass spectrometry and hot probe measurements. For the first time the impact of the unexpected junction on the characterization of metal-oxide-semiconductor structures with capacitance–voltage measurements is measured and explained via simulation. (Some figures in this article are in colour only in the electronic version)
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